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V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
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Document Number: 89010
Revision: 24-Jun-09
2
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage IR
= 1.0 mA T
A
= 25 °C V
BR
100 (minimum) -
V
Instantaneous forward voltage
per diode (1)
IF
= 5 A
IF
= 7.5 A
IF
= 15 A
TA
= 25 °C
VF
0.516
0.576
0.734
-
-
0.80
IF
= 5 A
IF
= 7.5 A
IF
= 15 A
TA
= 125 °C
0.455
0.522
0.627
-
-
0.68
Reverse current per diode (2)
VR
= 70 V
TA
= 25 °C
TA
= 125 °C
IR
7.2
8.0
-
-
μA
mA
VR
= 100 V
TA
= 25 °C
TA
= 125 °C
65
20
500
35
μA
mA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100C VF30100C VB30100C VI30100C UNIT
Typical thermal resistance per diode RθJC
2.5 5.5 2.5 2.5 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V30100C-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF30100C-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB30100C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB30100C-E3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI30100C-E3/4W 1.46 4W 50/tube Tube
Figure 1. Forward Current Derating Curve
Case Temperature (°C)
30
35
25
20
15
10
5
0
0 25 50 75 100 125 150
Resistive or Inductive Load
V30100C
VB(I)30100C
VF30100C
A
v
erage For
w
ard C
u
rrent (A)
Figure 2. Forward Power Loss Characteristics Per Diode
0
02468
10 12 14 16 18
2
4
6
8
10
D = 0.1
12
14
A
v
erage Po
w
er Loss (
W
)
Average Forward Current (A)
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
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